Nauman Z. Butt did his Ph.D. in Electrical Engineering from Purdue University in 2008 and B.S. in the same field from University of Engineering & Technology, Lahore in 2002. From 2008 to 2012, he was a member of technical staff in Semiconductor Research & Development Center (SRDC) in IBM Microelectronics Division, Hopewell Junction, NY.
Dr. Butt’s research interests include investigating physics and technology of microelectronic and optoelectronic devices through theory, compact modeling, simulations and experiments. His Ph.D. thesis was on computational study of scaling and radiation damage in nanoscale memory devices. In IBM, he has been involved in the development of embedded DRAM and dense SRAM devices in 32nm and 14nm SOI technology.
| Title | Publication | Author | Year |
|---|---|---|---|
| Field Assessment of Vertical Bifacial Agrivoltaics with Vegetable Production: A Case Study in Lahore, Pakistan | Renewable Energy | Akbar A., Mahmood F.I., Alam H., Aziz F., Bashir K., Zafar Butt N., | 2024 |
| All organic double cable polymers of a polythiophene donor with rhodanine and perylene diimide acceptors and evaluation of photocurrent generation | Journal of Materials Chemistry C | Iqbal S., Khan A.A., Butt N.Z., Ashraf R.S., Yameen B., | 2023 |
| State of Health and Degradation Mode Diagnostics for Lithium Metal Battery using Incremental Capacity Analysis | 2023 IEEE International Conference on Energy Technologies for Future Grids, ETFG 2023 | 2023 |
